As 2017 approaches, rumors surrounding the Samsung’s net big flagship grows and the latest one suggest the phone will debut with a Qualcomm Snapdragon 835 and 256 GB of Memory. The report comes from TechTastic, which sourced the information from Chinese source on Weibo.
According to the latest reports, the Samsung’s latest flagship device will be the Galaxy S8 with Qualcomm Snapdragon 835 or Samsung’s homegrown Eynos 9 series SoC coupled with 6GB of RAM and 256 GB of memory. This will be the first device to sport the recently announced Snapdragon 835 along with the quick charge 4.0 and other features to look forward to. It is expected to have a dual rear camera on the larger model and a pressure sensitive display to replace their famous home button and the capacitive keys just like in the iPhone 7.
An earlier post on Weibo said that the S8 may feature a curved 5.1-inch 2K Super AMOLED display, and the larger 5.5-inch version sporting a 4K display. The device is expected to come equipped with the Viv AI assistant by the Viv Labs, a Silicon valley startup acquired by the Samsung earlier this year.
An earlier report from Korea’s TheInvestor hinted that Samsung may not release a 5.1-inch variant of the device in support for a larger display on the “plus” version. The Samsung may release a 6.4-inch bezelbess design for the S8 plus and 5.-inch display carried from the S7 edge.
Also the iris Sensor form the Note 7 maybe included in the S8, afterall that technology didn’t get the recognition it was supposed to get with the Note 7 battery exploding and Note 7 getting discontinued soon after the launch.
After the Galaxy Note 7 debacle the S8 is gonna be the Samsung’s run for its reputation. Samsung has got a lot riding on the S8. If it fails the Samsung is doomed. Lets hope that the S8 won’t explode like the Note 7 did.